Boron Nitride Nano Materials

Boron Nitride Nano Materials

Boron Nitride Nano Materials
Yuda Yürüm

TEM image of BNNT-5

B. Saner Okan, Z. Ö. Kocabaş, A. Nalbant Ergün, M. Baysal, I. Letofsky-Papst, Y. YÜRÜM, The effect of reaction temperature and catalyst type on the formation of boron nitride nanotubes by chemical vapor deposition and measurement of their hydrogen storage capacity, Industrial and Engineering Chemistry Research, 51, 11341-11347, 2012.

Boron nitride nanotubes (BNNT) were synthesized over both Fe3+ impregnated MCM-41 (mobil composition of matter no. 41) and Fe2O3/MCM-41 complex catalyst systems at relatively low temperatures for 1 h by the chemical vapor deposition technique in large quantities. The formation of BNNT was tailored at different reaction temperatures by changing catalyst type. The use of Fe3+-MCM-41 and Fe2O3 as a complex catalyst system led to thin and thick tube formations. The diameters of BNNTs were in the range of 2.5−4.0 nm for thin tubes and 20−60 nm for thick tubes. The thin tube formation originated from the growth of BNNT over Fe3+-MCM-41 due to its average pore size of 4 nm. Higher reaction temperatures caused both BNNT and iron-based side product formations. The hydrogen uptake capacity measurements by the Intelligent Gravimetric Analyzer at room temperature showed that BNNTs could adsorb 0.85 wt % hydrogen which was two times larger than that for commercial carbon nanotubes.

M. Baysal, K. Bilge, M. M. Yıldızhan, Y. Yorulmaz, Ç. Öncel, M. Papila, Y. YÜRÜM
Catalytic Synthesis of Boron Nitride Nanotubes at Low Temperatures
Nanoscale, 10, 4658-4662, 2018.

KFeO2 is demonstrated to be an efficient catalyst for the formation of boron nitride nanotubes (BNNT) by thermal chemical vapor deposition (TCVD). This alkali-based catalyst enables the formation of crystalline, multi-walled BNNTs with high aspect ratio at temperatures as low as 750 °C, significantly lower than those typically required for the product formation by TCVD.

SEM micrograph of BNNT coverage on the walls (A) 750 °C, (B) 800 °C (C) 1000 °C.